PATTERN FORMING METHOD, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE AND PHOTOSENSITIVE COMPOSITION

Title:

PATTERN FORMING METHOD, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE AND PHOTOSENSITIVE COMPOSITION

Document Type and Number:

Japanese Patent JP2002139834

Kind Code:

A

Abstract:

To provide a method for forming a negative type pattern free of swelling and excellent in resolution while having a chemical structure transparent in the far UV region including 193 nm wavelength of ArF excimer laser beam and having high dry etching resistance.

A reaction in which part or the whole of a γ- or δ- acetoxycarboxylic acid structure is converted into a lactone structure by an acid catalyzed reaction is used.

More Like This:

JP6177597	A manufacturing method of salt, a resist composition, and a resist pattern
JP2021183595	SALT, ACID GENERATOR, RESIST COMPOSITION, AND METHOD FOR PRODUCING RESIST PATTERN
JP4514583	Organic antireflection film composition and photoresist pattern forming method using the same

Inventors:

HATTORI KOJI
YOKOYAMA YOSHIYUKI
SHIRAISHI HIROSHI

Application Number:

JP2000340380A

Publication Date:

May 17, 2002

Filing Date:

November 02, 2000

Export Citation:

Click for automatic bibliography generation Help

Assignee:

HITACHI LTD

International Classes:

G03F7/038; C08F8/16; C08F32/04; C08K5/00; C08L45/00; G03F7/38; G03F7/40; H01L21/027; (IPC1-7): G03F7/038; C08F8/16; C08F32/04; C08K5/00; C08L45/00; G03F7/38; G03F7/40; H01L21/027

Attorney, Agent or Firm:

Sakuta Yasuo

Previous Patent: PHOTOPOLYMERIZABLE COMPOSITION AND PHOTOSENSITIVE AND HEAT SENSITIVE RECORDING MATERIAL

Next Patent: POSITIVE TYPE RESIST COMPOSITION