To provide a positive type resist composition having enhanced resolving power and improved process admissibility such as margin for exposure and focal depth and less liable to cause development defects in lithography using a short-wavelength light source for exposure capable of ultra- microfabrication and a positive type chemical amplification resist.

The positive type resist composition contains a compounds which generates a sulfonic acid having an alkane moiety substituted by at least one fluorine atom when irradiated with active light and an acid decomposable resin having repeating units of formula (A) as a resin having a group which is decomposed by the action of the acid to increase the solubility of the resin in an alkali developing solution.