Title:
相変化メモリ装置
Document Type and Number:
Japanese Patent JP4481697
Kind Code:
B2
Abstract:
A phase exchange memory module has phase exchange memory cells (Pcelli1) with a volume of material (104) which is programmable between an amorphous and a crystalline state, and a write current source (440) which selectively applies a first write current pulse to program the phase exchange memory cell with the amorphous state and a second write current pulse is applied to program the phase exchange memory cell with the crystalline state. A recovery circuit (420) selectively applies the first write current pulse to the phase exchange memory cell (Pcelli1) to recovery the amorphous state. An independent claim is also included for a program method for phase exchange memory cell.
Inventors:
Huangei South
Kim strange south
Anzhen
Kim strange south
Anzhen
Application Number:
JP2004096312A
Publication Date:
June 16, 2010
Filing Date:
March 29, 2004
Export Citation:
Assignee:
SAMSUNG ELECTRONICS CO.,LTD.
International Classes:
G11C13/00; G11C16/02; H01L27/105; H01L45/00
Foreign References:
| WO2003009302A1 | ||||
| US20030002332 |
Attorney, Agent or Firm:
Kyosei International Patent Office