Title:
PHOTOCHEMICAL VAPOR-PHASE REACTION METHOD
Document Type and Number:
Japanese Patent JPS59224118
Kind Code:
A
Abstract:
PURPOSE:To increase the speed of formation of a film by projecting ultraviolet beams to a film forming surface in a pulsatile shape. CONSTITUTION:A thin-film forming device through an optical CVD method is constituted by a reaction-gas supply system 10, a reaction system 20 and an exhaust system 30, and ultraviolet rays are projected to silicon single crystal wafers 25 arranged on a substrate support base 23 in a reaction vessel 21 to form thin-films on the wafers 25. A rotary disk 26 to which slits 26a are shaped is inserted between the reaction vessel 21 and an ultraviolet light source 22, and pulsatile beams are projected onto the substrates. The speed of deposition of the film by a photochemical reaction can be increased by projecting beams in a pulsatile shape, and the throughput of the formation of the thin-film can be improved.
Inventors:
MOCHIZUKI YASUHIRO
SUZUKI TAKAYA
SUZUKI TAKAYA
Application Number:
JP9785583A
Publication Date:
December 17, 1984
Filing Date:
June 03, 1983
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L21/205; H01L21/31; (IPC1-7): H01L21/205; H01L21/26; H01L21/31
Attorney, Agent or Firm:
Akio Takahashi