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Title:
光電変換素子および太陽電池
Document Type and Number:
Japanese Patent JPWO2016136729
Kind Code:
A1
Abstract:
透明基板（１１）上に、透明電極層（１２）、正孔輸送層（１３）、少なくとも１種のペロブスカイト化合物を光吸収剤として含む感光層（１４）、電子輸送層（１５）および対極（１６）をこの順に有し、正孔輸送層（１３）および電子輸送層（１５）が、いずれも、無機半導体で形成された無機半導体層であり、かつ感光層（１４）に隣接している光電変換素子（１０）、ならびに、この光電変換素子（１０）を用いた太陽電池。

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Inventors:
Yoshioka Tomoaki
Hirotaka Sato
Katsutoshi Kobayashi
Application Number:
JP2017502380A
Publication Date:
December 07, 2017
Filing Date:
February 23, 2016
Export Citation:
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Assignee:
FUJIFILM Corporation
International Classes:
H01L51/44; H01L51/46
Domestic Patent References:
JP2014175473A2014-09-22
JP2012199023A2012-10-18
JP2013208844A2013-10-10
Foreign References:
WO2014180780A12014-11-13
WO2015031944A12015-03-12
Other References:
HU, LONG ET AL.: "Sequential Deposition of CH3NH3PbI3 on Planar NiO Film for Efficient Planar Perovskite Solar Cells", ACS PHOTONICS, vol. 1 (7), JPN6016017948, 2014, pages 547 - 553, ISSN: 0003817282
Attorney, Agent or Firm:
Toshizo Iida
Shuichi Akabane



 
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