フォトリソグラフィパターン製造方法 - シーメンスアクチエンゲゼルシヤフト

Title:

フォトリソグラフィパターン製造方法

Document Type and Number:

Japanese Patent JP3512190

Kind Code:

B2

Abstract:

PCT No. PCT/DE95/01184 Sec. 371 Date Mar. 12, 1997 Sec. 102(e) Date Mar. 12, 1997 PCT Filed Sep. 1, 1995 PCT Pub. No. WO96/08750 PCT Pub. Date Mar. 21, 1996In a method for producing photolithographic patterns in the submicron range, applied on a substrate is a photoresist layer comprised of a polymer containing carboxylic acid anhydride groups and tert. butylester or tert. butoxy-carbonyloxy groups, a photoactive component-in the form of an ester of a naphthoquinonediazide-4-sulfonic acid with an aromatic or aliphatic-aromatic hydroxy compound-and a suitable solvent; the photoresist layer is then dried, exposed in an imaging manner, and subjected to a temperature treatment in the range of between 120 DEG and 150 DEG C. for a duration of 100 to 600 seconds. The photoresist layer is then subjected to a liquid silylation and is dry-developed in an anisotropic oxygen plasma.

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Inventors:

シユミツト、エルヴイン
ゼチ、レカイ
ロイシユナー、ライナー

Application Number:

JP50979996A

Publication Date:

March 29, 2004

Filing Date:

September 01, 1995

Export Citation:

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Assignee:

シーメンスアクチエンゲゼルシヤフト

International Classes:

G03F7/004; G03F7/022; G03F7/023; G03F7/033; G03F7/039; G03F7/26; G03F7/38; H01L21/027; (IPC1-7): G03F7/022; G03F7/033; G03F7/38; H01L21/027

Attorney, Agent or Firm:

山口巖

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