PHOTORESIST COMPOSITION, PHOTORESIST PATTERN FORMING METHOD AND SEMICONDUCTOR DEVICE

Title:

PHOTORESIST COMPOSITION, PHOTORESIST PATTERN FORMING METHOD AND SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JP2002139840

Kind Code:

A

Abstract:

To enhance the resolution and contrast of the L/S pattern of a photoresist pattern.

When a photoresist composition to which a crosslinker of formula (1) or (2) has been added is used, the flow characteristics of a resist are improved and the resolution and contrast of an L/S pattern can be enhanced.

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Inventors:

LEE GEUN SU
KIN CHINSHU
JUNG JAE CHANG
JUNG MIN HO
BAIK KI HO

Application Number:

JP2001273971A

Publication Date:

May 17, 2002

Filing Date:

September 10, 2001

Export Citation:

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Assignee:

HYNIX SEMICONDUCTOR INC

International Classes:

G03F7/004; G03F7/039; G03F7/40; H01L21/027; (IPC1-7): G03F7/039; G03F7/004; G03F7/40; H01L21/027

Attorney, Agent or Firm:

Hiroshi Arafune (1 person outside)

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