Title:
PHOTOSENSOR
Document Type and Number:
Japanese Patent JP3407917
Kind Code:
B2
Abstract:
PURPOSE: To improve a breakdown strength by intervening an amorphous silicon carbon film of a particular film thickness between a p-layer and an i-layer of a photoelectric conversion film made of a laminated body comprising p, i and n layers, thereby increasing the resistance value of a photosensor itself.
CONSTITUTION: An amorphous silicon carbon film 3c is disposed in such a manner that it is intervened between a p-type layer 3p and an i-type layer 3i. When the film thickness of the amorphous silicon carbon film 3c becomes thicker than 800&angst , the breakdown strength of the photosensor sharply increases beyond 150V. Also, the resistance value of the photosensor itself under light irradiation suddenly increases at 800&angst as a boundary. Thus, by intervening a amorphous silicon carbon film 3c between the p-type layer and the i-type layer in such a manner that the resistance value of the sensor itself exceeds 3.7×104Ω/mm3 under light irradiation condition, it becomes possible to obtain a sufficient breakdown strength. By doing this, a decrease in the yield due to electrostatic breakdown can be suppressed.
Inventors:
Saburo Nakajima
Hiroshi Inoue
Hiroshi Inoue
Application Number:
JP1474693A
Publication Date:
May 19, 2003
Filing Date:
February 01, 1993
Export Citation:
Assignee:
Sanyo Electric Co., Ltd.
International Classes:
H01L31/04; H01L31/10; (IPC1-7): H01L31/10; H01L31/04
Domestic Patent References:
| JP60128661A | ||||
| JP1245562A | ||||
| JP1139459U | ||||
| JP454980B2 |
Attorney, Agent or Firm:
Masamasa Shibano