Title:
PLANAR COLD CATHODE
Document Type and Number:
Japanese Patent JP3579972
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a planar cold cathode which can perform highly efficient electron emission stably for a long time by forming a lower electrode and an upper electrode through an insulating layer on an insulating substrate, and making the electron emission face of the upper electrode adsorb atoms such as Li, etc.
SOLUTION: A lower electrode 12 consisting of an Al film about 100nm thick is made on an insulating substrate 18 such as an Si substrate fitted with thermal oxide by a sputtering method. Next, the surface of the Al film is oxidized by an anode oxidation method, and an insulating film 11 consisting of Al2O3 about 4nm thick is made. Hereon, an upper electrode 10 consisting of Au film about 10nm thick is made by a sputtering method. On this upper electrode 10 is alkaline metal 19 (at least one kind out of Li, Na, and K) deposited for adsorption in a vacuum device at about 1/108Torr or under. Hereby, a planar cold electrode which can emit a highly efficient planar electron beam for a long time can be obtained.
Inventors:
Toshiaki Kusunoki
Mutsumi Suzuki
Mutsumi Suzuki
Application Number:
JP19284595A
Publication Date:
October 20, 2004
Filing Date:
July 28, 1995
Export Citation:
Assignee:
株式会社日立製作所
International Classes:
H01J1/312; H01J1/30; (IPC1-7): H01J1/312
Domestic Patent References:
| JP63141234A |
Other References:
A. A. Talin et al.,Effects of potassium and lithium metal deposition on the emission characteristics of Spindt-type ...,Jounal of Vacuum Science & Technology B,米国,1995年 4月,Volume13, Number2,pp.448-451
Attorney, Agent or Firm:
Yasuo Sakuta
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