To provide a plasma CVD device and a plasma CVD film manufacturing method capable of manufacturing a silicon film whose film thickness uniformity is satisfactory on a large-scaled substrate, and reducing maintenance check costs.

This device includes a main heater 2 for holding and heating a substrate; a grid heater 4 disposed so as to face the substrate on the main heater for heating the surface of the substrate, a grid-shaped gas electrode tube 5 disposed so as to face the substrate on the main heater, and provided with a plurality of gas feed holes 5a opened toward the substrate; gas feed mechanisms 15, 16, and 18 for feeding a reactive gas to a gas electrode tube, and for diffusing and spraying the reactive gas from the plurality of gas feeding holes to the substrate; a high-frequency power source 14 for applying a high frequency to the gas electrode tube, and for generating discharge plasma between the gas electrode tube and the substrate; and exhaust tubes 7, 7A, and 7B for exhausting non-reactive gas existing in a plasma generation region and its peripheral region through a plurality of exhaust holes opened in the neighborhood of the gas feed holes.