PLASMA ETCHING DEVICE USING PLASMA CONFINEMENT

Japanese Patent JP2963392

B2

PROBLEM TO BE SOLVED: To quicken passing of used gas, shorten processing time, and reduce cost by flowing gas flowing outside from inside by limiting it to plural parallel passages arranged at intervals in the direction vertical to a gas stream by a shutting-up mechanism.
SOLUTION: A pair of parallel electrodes 13 and 14 are arranged in a chamber 12, and a workpiece 16 on which plasma etching is performed is supported on the electrode 13. At operation, gas of an etching agent flows in an interactive space 17 by passing through the chamber 12, and radio-frequency voltage is impressed between both electrodes, and plasma is formed. A parallel circumferential directional clearances 31 having intervals in the vertical direction are formed in a space between adjacent circular rings 32 of a ring mechanism 39 in which plasma discharge is shut up. Used gas flows out of the space 17 by passing through the clearances 31 while particle electric charge is being neutralized by collision with walls of the rings 32. The clearances 31 running over the whole circumference of the mechanism 30 are interrupted only by a spacer 34, and the prescribed aspect ratio is set. Preferably, the rings 32 are composed of three or more dielectrics of quartz or the like.

ERITSUKU HAWAADO RENTSU
ROBAATO DEYUAN DEBURU

JP14704096A

October 18, 1999

June 10, 1996

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RAMU RISAACHI CORP

H05H1/46; B01J19/08; C23C16/50; C23F4/00; H01J37/32; H01L21/205; H01L21/302; H01L21/3065; (IPC1-7): H05H1/46; B01J19/08; C23C16/50; C23F4/00; H01L21/205; H01L21/3065

JP63307735A

Masao Okabe (9 others)

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