Title:
PLASMA FILM FORMING EQUIPMENT AND ITS CLEANING METHOD
Document Type and Number:
Japanese Patent JP2004207466
Kind Code:
A
Abstract:
To reduce an amount of use and an amount of discharge of PFC gas used for cleaning a chamber in plasma film forming equipment.
A reaction condition or an exclusion condition is modified by monitoring reactive gas or exhaust gas during the cleaning of the chamber to detect a completed point of cleaning and performing the feedback of the point to a flow rate control device or an exclusion device. Thus, the amount of the use and the amount of the discharge of the PFC gas are reduced and the cleaning in the chamber can be efficiently and surely performed without excessively operating the exclusion device.
Inventors:
YANO CHIZUKO
SHITSUPOU OSAMU
SHITSUPOU OSAMU
Application Number:
JP2002374384A
Publication Date:
July 22, 2004
Filing Date:
December 25, 2002
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
B01D53/70; B01D53/68; B01J4/00; B01J19/08; C23C16/44; H01L21/205; H01L21/3065; (IPC1-7): H01L21/205; B01D53/68; B01D53/70; B01J4/00; B01J19/08; C23C16/44; H01L21/3065
Attorney, Agent or Firm:
Fumio Iwahashi
Tomoyasu Sakaguchi
Hiroki Naito
Tomoyasu Sakaguchi
Hiroki Naito
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