To provide a plasma processing apparatus, that is capable of adsorbing a semiconductor wafer in a stable manner from the start of the processing of a semiconductor wafer.

A plasma processing apparatus 20 contains a vacuum chamber 21, a lower electrode 24 placed inside of the vacuum chamber 21, a dielectric film 23 prepared on the surface of the lower electrode 24, a processing-conditions memory member 35 that is stored with processing condition for generating plasma inside of the vacuum chamber 21 and with actual adsorption voltage to be applied between the semiconductor wafer 22 and the dielectric film 23 for mutually adsorbing to each other, a memory and processing member 36 that stores in advance the relation between the processing condition and a self-bias voltage to be generated on the surface of the semiconductor wafer 22, calculates the self-bias voltage from the processing condition, to which the actual adsorption voltage stored in the memory and processing member 36 is applied, and outputs the result, and an electrostatic-chucking power source 31 for applying the voltage to be output from the memory and processing member 36 to the lower electrode 24.