To secure uniformity in treatment even if the frequency of high-frequency power to be applied to a plasma source is increased, and to prevent malfunction due to noise.
In the plasma treatment apparatus where high-frequency power is applied to an upper electrode 5 in a first vacuum container 1 to generate plasma, the entire shape of the first vacuum container 1 is set to a shape where an extremely different site is eliminated from a concentric circular shape using the center of a substrate 7 to be treated as a center to secure uniformity in treatment, and a portion around plasma generation space in the first vacuum container 1 is surrounded by a grounded material completely, thus preventing the generation of an electric field at a periphery, setting the pressure of a second vacuum container 15 being connected adjacent to the first vacuum container 1 to 1 Pa or less or 10 Pa or more, and hence preventing malfunction due to noise.
| JP2000323463 | PLASMA PROCESSING METHOD |
| WO/2010/139788 | PLASMA GENERATION DEVICE WITH ELECTRON CYCLOTRON RESONANCE |
| JP2967770 | [Title of Invention] Plasma processing apparatus |
OKUMURA TOMOHIRO
MAEKAWA YUKIHIRO
SUMITA KENJI
| JPH056800A | 1993-01-14 | |||
| JPH0645253A | 1994-02-18 | |||
| JPH0820879A | 1996-01-23 | |||
| JPH0774159A | 1995-03-17 | |||
| JP2001148378A | 2001-05-29 | |||
| JPH05160039A | 1993-06-25 | |||
| JPH0722499A | 1995-01-24 | |||
| JPH11238597A | 1999-08-31 |