Title:
POLISHING COMPOSITION AND POLISHING METHOD USING IT
Document Type and Number:
Japanese Patent JP3899456
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a polishing composition and a polishing method for polishing copper, tantalum containing compound and Low-k material at the same degree and high polishing velocity in a CMP processing process.
SOLUTION: The polishing composition consists of colloidal silica whose surface is electropositive, colloidal silica whose surface is electronegative, at least one kind of acid selected from a group comprising nitric acid, hydrochloric acid, sulfuric acid, lactic acid, acetic acid, oxalic acid, citric acid, malic acid, succinic acid, butyric acid and malonic acid, at least one kind of anticorrosive selected from a group comprising benzotriazol, benzimidazole, triazole, imidazole, tolyltriazole and derivative thereof and water. In the method, a semiconductor device containing copper, tantalum containing compound and a Low-k material is polished by using the polishing composition.
Inventors:
Hiroshi Asano
Kenji Sakai
Ina Katsuyoshi
Kenji Sakai
Ina Katsuyoshi
Application Number:
JP2001321981A
Publication Date:
March 28, 2007
Filing Date:
October 19, 2001
Export Citation:
Assignee:
Fujimi Incorporated Co., Ltd.
International Classes:
B24B57/02; H01L21/304; B24B37/00; C09G1/02; C09K3/14; H01L21/321; (IPC1-7): H01L21/304; B24B37/00; B24B57/02; C09K3/14
Domestic Patent References:
| JP2001332518A | ||||
| JP2001131534A | ||||
| JP2001196336A | ||||
| JP2001115146A |
Attorney, Agent or Firm:
Souji Sasaki
Hisao Kobayashi
Saburo Kimura
Noboru Omura
Hisao Kobayashi
Saburo Kimura
Noboru Omura