POLYMER COMPOUND, RESIST MATERIAL, AND PATTERN FORMATION METHOD

Japanese Patent JP3832564

B2

PROBLEM TO BE SOLVED: To provide a polymer compound which, as a resist material, is excellent in sensitivity to high-energy rays, especially, to one having a wavelength of 170 nm or lower, has an improved plasma etching resistance because of fluorine-containing aromatic rings introduced thereinto, and exhibits an excellent resolution.
SOLUTION: This compound is represented by formula (1) (wherein R1 is F or a fluoroalkyl group; R2 is H or a 1-20C linear, branched, or cyclic alkyl group; R3 and R4 are each H, F or a 1-20C linear, branched or cyclic alkylene group optionally fluorinated, provided when R3 and R4 are each a 1-20C linear, branched or cyclic alkylene group optionally fluorinated, they may combine with each other to form a ring; a and b are each an integer of 0, 1 or 2 and c is an integer of 1, 2 or 3, provided a+b+c=3; and k is an integer of 1-5 and k' is an integer of 0-4, provided k+k'=5).

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Yuji Harada
Jun Watanabe
Jun Hatakeyama
Yoshio Kawai
Masako Sasako
Masataka Endo
Kishimura Shinji
Mitsutaka Otani
Satoru Miyazawa
Kentaro Tsutsumi
Kazuhiko Maeda

JP2001047468A

October 11, 2006

February 23, 2001

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Shin-Etsu Chemical Co., Ltd.
Matsushita Electric Industrial Co., Ltd
Central Glass Co., Ltd.

C08F20/16; G03F7/039; C08F22/14; C08F32/00; C08F34/00; C08L101/08; H01L21/027; (IPC1-7): C08F20/16; C08F22/14; C08F32/00; C08F34/00; C08L101/08; G03F7/039; H01L21/027

JP64049039A
JP2045509A
JP64026611A

Takashi Kojima
Yuko Nishikawa

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