To provide a polymer which can be suitably used as a base polymer for a resist using ArF excimer laser as a light source, that is, a novel polymer capable of satisfying characteristics such as transparency at 193 nm, dry etching resistance and adhesiveness to a substrate, and a polymerizable compound necessary for manufacturing the polymer, and further to provide a chemically amplifying positive type resist composition using the polymer.
The polymerizable compound is represented by general formula (1), [wherein either one of R1 and R2 represents a hydrogen atom or a 1-4C alkyl group (except for a tert-butyl group), and the other represents a 1-4C alkyl group (except for a tert-butyl group), R3 to R9 each represent a monovalent non-polymerizable group, and A represents a group having a polymerizable carbon-carbon double bond], and this polymer alone or a polymer of the compound copolymerizable with this, and a resist composition comprising the polymer are also provided.
OKA NOBUYUKI
KANEKO MASAO
| JP2000159758A | 2000-06-13 |
Miyuki Ariga
Toshio Takano
Toshio Nakajima
Masaki Murata
Hiroto Yamamoto