To provide a resist composition having excellent sensitivity and low line edge roughness and significantly reducing development defects.
The positive resist composition contains: (A) a resin which has a structure containing a specified repeating unit and having a fluorine atom substituted in the main chain and/or the side chain of the polymer skeleton and which is decomposed by the effect of an acid to increase the solubility with an alkaline developing solution; (B) a compound which generates an acid by irradiation of active rays or radiation; and (C) a compound having a hydroxyl group and ≤2 pKa of its conjugate acid. The resist composition is a chemically amplified resist composition suitable when an exposure light source at ≥100 nm and ≤250 nm, preferably ≥100 nm and ≤180 nm, and more preferably F2 excimer laser light (at 157 nm) is used. The method for forming a pattern is carried out by using the above composition.
KANNA SHINICHI
Hironori Honda
Toshimitsu Ichikawa
Takeshi Takamatsu
Yuriko Hamada