To provide a chemically amplified positive resist composition which has high sensitivity and high resolution, is excellent in focal depth width characteristic and storage stability of a resist solution and allows formation of a resist pattern excellent in profile shape without substrate dependence, and is sensitive to excimer laser of KrF or the like, and radiation such as X ray and electron beam.
The positive resist composition comprises: a compound (A) which produces carboxylic acid represented by the formula (I) by irradiation with active light rays or radiation; a resin (B) which is an alkali-insoluble or alkali-hardly soluble resin protected by acid-decomposable group and becomes alkali-soluble when the acid-decomposable group is decomposed; and a compound (C) which produces an acid other than the acid represented by the formula (I) by irradiation with active light ray or radiation. In the formula (I), R1 and R2 respectively and independently present a hydrogen atom, a fluorine atom, an alkyl group, a cycloalkyl group, an alkenyl group or an allyl group. The alkyl group, cycloalkyl group, alkenyl group and allyl group may have a substituent respectively. Further, R1 and R2 may be coupled to each other to form a ring.
Kurata Masatoshi
Satoshi Kono
Makoto Nakamura
Yoshihiro Fukuhara
Takashi Mine
Toshio Shirane
Sadao Muramatsu
Nobuhisa Nogawa
Kocho Chojiro
Naoki Kono
Katsu Sunagawa
Katsumura Hiro
Ryo Hashimoto
Tetsuya Kazama
Shoji Kawai
Tatsushi Sato
Takashi Okada
Mihoko Horiuchi
Takenori Masanori
Takuzo Ichihara
Yamashita Gen