POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME

Title:

POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME

Document Type and Number:

Japanese Patent JP2005202205

Kind Code:

A

Abstract:

To provide a positive resist composition which exhibits satisfactory transmittance at the time of using an exposure light source of ≤200 nm, specifically F2 excimer laser light (157 nm) and is improved in surface roughness, development defects, scum and resolution, and to provide a pattern forming method using the same.

The positive resist composition contains (A) a resin which has a methacrylic acid-based repeating unit in which a methyl group substituted by a hydroxy group and a fluoroalkyl group bonds to an α-carbon atom and is decomposed by the action of an acid to increase solubility in an alkaline developer, and (B) a compound which generates an acid upon irradiation with an actinic ray or a radiation. The pattern forming method uses the same.

Inventors:

KANDA HIROMI
MIZUTANI KAZUYOSHI

Application Number:

JP2004009103A

Publication Date:

July 28, 2005

Filing Date:

January 16, 2004

Export Citation:

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Assignee:

FUJI PHOTO FILM CO LTD

International Classes:

G03F7/039; C08F20/04; C08F20/26; C08F212/14; C08F214/18; C08F216/14; C08F220/24; C08F232/08; H01L21/027; (IPC1-7): G03F7/039; C08F20/04; C08F20/26; C08F212/14; C08F214/18; C08F216/14; C08F220/24; C08F232/08; H01L21/027

Attorney, Agent or Firm:

Shohei Oguri
Hironori Honda
Toshimitsu Ichikawa
Takeshi Takamatsu
Yuriko Hamada

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