POSITIVE RESIST COMPOSITION - FUJI PHOTO FILM CO LTD

Title:

POSITIVE RESIST COMPOSITION

Document Type and Number:

Japanese Patent JP2004109834

Kind Code:

A

Abstract:

To provide a positive resist composition which is suitable when an exposure light source of ≤160 nm wavelength, in particular, F2 excimer laser light (at 157 nm) is used, and specifically, which exhibits sufficient transparency when a light source of 157 nm is used, and which has various excellent characteristics such as affinity with a developer solution, image forming property and dry etching resistance.

The positive resist composition contains: (A) a resin which has at least each one kind of a repeating unit of a specified structure and a repeating unit having a specified partial structure and the solubility of which increases with an alkali developer by the effect of an acid; and (B) a compound which generates an acid by the effect of active rays or radiation.

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Inventors:

SASAKI TOMOYA
MIZUTANI KAZUYOSHI
KANNA SHINICHI

Application Number:

JP2002275241A

Publication Date:

April 08, 2004

Filing Date:

September 20, 2002

Export Citation:

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Assignee:

FUJI PHOTO FILM CO LTD

International Classes:

G03F7/039; C08F216/14; C08F220/12; C08F220/54; C08F228/02; C08F232/04; H01L21/027; (IPC1-7): G03F7/039; C08F216/14; C08F220/12; C08F220/54; C08F228/02; C08F232/04; H01L21/027

Attorney, Agent or Firm:

Shohei Oguri
Hironori Honda
Toshimitsu Ichikawa
Takeshi Takamatsu
Yuriko Kuriu

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