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Title:
POSITIVE TYPE RESIST COMPOSITION
Document Type and Number:
Japanese Patent JP2004109850
Kind Code:
A
Abstract:

To provide a positive type resist composition that is suitable for the use of an exposure light source of ≤160nm especially of a F2 excimer laser beam (157nm), specifically a positive type resist composition that indicates sufficient transparency when a light source of 157nm is used and has little light edge roughness, development defect and scum.

The positive type resist composition contains a compound having a particular aromatic or cycloaliphatic ring structure which has two norbornene rings having a group that decomposes by the action of acid to generate a carboxylic acid.


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Inventors:
MIZUTANI KAZUYOSHI
Application Number:
JP2002275425A
Publication Date:
April 08, 2004
Filing Date:
September 20, 2002
Export Citation:
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Assignee:
FUJI PHOTO FILM CO LTD
International Classes:
G03F7/004; C08F12/22; C08F20/04; C08F20/16; C08F32/08; G03F7/039; H01L21/027; (IPC1-7): G03F7/004; C08F12/22; C08F20/04; C08F20/16; C08F32/08; G03F7/039; H01L21/027
Attorney, Agent or Firm:
Shohei Oguri
Hironori Honda
Toshimitsu Ichikawa
Takeshi Takamatsu
Yuriko Kuriu



 
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