To provide a planarization and removal method of a metal film, which does not leave scratches on the metal surface after planarization and has no possibility that an abrasive is infilled in the proximity of the surface, when a metal wiring layer on an insulation film is planarized or removed in a wiring process of a semiconductor device, and to provide a planarization apparatus.

As a selective masking means of concave portions of an etched object surface, another etchant having a higher specific gravity than that of the etchant mixed with fine spherical solid particles is flown in. Since the fine solid particles are deposited and accumulated in the concave portions, the concave portions are masked and the etching speed is suppressed, and so the etching of convex portions to be removed is selectively processed, which enables planarization or removal of a wiring film. Since abrasive grains are not used, ideal planarization or removal of the metal film is realized without occurrence of fine scratches on the surface or burials of abrasive grains on the wiring material.