Title:
PRODUCTION OF HIGH PURITY SILICON CARBIDE BODY
Document Type and Number:
Japanese Patent JPH05124863
Kind Code:
A
Abstract:
PURPOSE: To increase production efficiency by forming an SiC film on the surface of an Al2O3 substrate by chemical vapor deposition and then removing the substrate.
CONSTITUTION: An Si-contg. compd. such as SiCl4 a C-contg. compd. such as CH4 and H2 are fed at prescribed flow rates to the surface of an Al2O3 substrate formed into a pipe shape, etc., and an SiC film is formed on the surface of the substrate by chemical vapor deposition at a high temp. of ≤1,000°c under reduced pressure in 100-2,000×m thickness. After cooling to ordinary temp., the substrate is easily separated and a high purity SiC body is obtd.
Inventors:
OHASHI TOSHIYASU
KUBOTA YOSHIHIRO
HARADA KESAJI
TAMURA KAZUYOSHI
KUBOTA YOSHIHIRO
HARADA KESAJI
TAMURA KAZUYOSHI
Application Number:
JP31134691A
Publication Date:
May 21, 1993
Filing Date:
October 31, 1991
Export Citation:
Assignee:
SHINETSU CHEMICAL CO
International Classes:
C01B31/36; B28B21/42; C04B35/56; C04B35/565; (IPC1-7): C01B31/36; C04B35/56
Attorney, Agent or Firm:
Takashi Kojima