Title:
FORMING METHOD OF SILICIDE PLUG
Document Type and Number:
Japanese Patent JP3120517
Kind Code:
B2
Abstract:
PURPOSE: To obtain a stable TiSi2 plug which is excellent in burying properties, low in leakage and contact resistance, and hardly corrodes a base.
CONSTITUTION: A silicide plug is formed through such a method that an opening 16 is provided to an interlayer insulating layer 14 formed on a semiconductor substrate 10 and silicide is filled into the opening 16. In a first way, a process where a silicon layer 18 is formed on the base of an opening and another process where silicide is filled into the opening through a CVD method are provided. In a second way, a process where a silicide thin film is formed on the base of an opening and then the thin film is nitrided, and another process where silicide is filled into the opening through a CVD method are provided.
Inventors:
Takaaki Miyamoto
Application Number:
JP34403391A
Publication Date:
December 25, 2000
Filing Date:
December 03, 1991
Export Citation:
Assignee:
ソニー株式会社
International Classes:
H01L21/28; H01L21/768; (IPC1-7): H01L21/28; H01L21/768
Domestic Patent References:
| JP2222531A | ||||
| JP1243452A | ||||
| JP58116751A | ||||
| JP4359513A | ||||
| JP461323A | ||||
| JP3286527A | ||||
| JP2164031A | ||||
| JP215620A | ||||
| JP6477934A | ||||
| JP6441241A | ||||
| JP6312132A | ||||
| JP62206852A | ||||
| JP6298723A | ||||
| JP6276518A | ||||
| JP5976424A | ||||
| JP5972132A |
Attorney, Agent or Firm:
Takahisa Yamamoto