Title:
QUARTZ CRUCIBLE FOR LIFTING SILICON SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JPH03141189
Kind Code:
A
Abstract:
PURPOSE:To provide a quartz crucible substantially not affected by impurities by adding the group V element for forming an n type semiconductor and the group III element for forming a p type semiconductor in a specific ratio. CONSTITUTION:The quartz crucible contains the group V element for forming an n type semiconductor and the group III element for forming a p type semiconductor in a ratio of 1:0.5-5. The group III element such as B and the group V element such as P or As are dopants for forming p type and n type semiconductors, respectively, and have a p, n compensation relation in a silicon single crystal. Since it is expected that the coexistence of the elements cancels the effect of the other element each other, the group III and V elements are added in such amounts as cancelling the effects each other, thereby providing a quartz crucible capable of neglecting the effects of the elements. When the above-mentioned ratio is 1:<0.5, the compensation effect is insufficient, while the ratio of 1:>5 is undesirable because the silicon single crystal causes p-n reversion.
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Inventors:
TSUJI YOSHIYUKI
KATO MASANORI
KATO MASANORI
Application Number:
JP27873489A
Publication Date:
June 17, 1991
Filing Date:
October 27, 1989
Export Citation:
Assignee:
MITSUBISHI MATERIALS CORP
International Classes:
C30B15/10; C03B20/00; C30B29/06; H01L21/208; (IPC1-7): C30B15/10; C30B29/06; H01L21/208
Domestic Patent References:
| JPS6296388A | 1987-05-02 | |||
| JPS62226890A | 1987-10-05 |
Attorney, Agent or Firm:
Chiba Hiroshi