Title:
RADIATION SENSITIVE COMPOSITION AND PATTERN FORMING METHOD, AND MANUFACTURE OF SEMICONDUCTOR APPARATUS
Document Type and Number:
Japanese Patent JP2000292924
Kind Code:
A
Abstract:
To provide a radiation sensitive composition having a chemical structure transparent to ArF excimer laser beams having a wavelength of 193 nm and high in resistance to dry etching, and a method for forming a negative pattern free from swelling and high in resolution and superior in developability by using an aqueous developing solution of widely used tetramethylammonium hydroxide.
This radiation sensitive composition contains as the base resin of a resist a polymer having a γ-hydroxyacid structure synthesized by reducing and opening a ring of at least one part of the acid anhydride of a copolymer comprising at least 2 kinds of monomers of a nonconjugated cyclic diene of 5-methylenebicyclo[2,2,1]hepto-2-ene, and citraconic acid anhydride.
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Inventors:
HATTORI KOJI
TSUCHIYA HIROKO
YOKOYAMA YOSHIYUKI
OIIZUMI HIROAKI
SHIRAISHI HIROSHI
TSUCHIYA HIROKO
YOKOYAMA YOSHIYUKI
OIIZUMI HIROAKI
SHIRAISHI HIROSHI
Application Number:
JP10371499A
Publication Date:
October 20, 2000
Filing Date:
April 12, 1999
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L21/027; C08F8/04; C08F8/12; C08F222/04; C08F232/00; C08F236/20; C08K5/36; C08L45/00; C08L47/00; G03F7/038; G03F7/20; G03F7/32; G03F7/38; (IPC1-7): G03F7/038; C08F8/04; C08F8/12; C08F222/04; C08F232/00; C08F236/20; C08K5/36; C08L45/00; C08L47/00; G03F7/20; G03F7/32; G03F7/38; H01L21/027
Attorney, Agent or Firm:
Sakuta Yasuo