Title:
REFLECTION TYPE MASK BLANK, REFLECTION TYPE MASK, METHOD FOR MANUFACTURING REFLECTION TYPE MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2022098729
Kind Code:
A
Abstract:
To provide a reflection type mask blank by which mask inspection can be performed highly accurately while fulfilling a phase shift function and optical characteristics required for a reflection-type phase shift mask.SOLUTION: A reflection type mask blank comprises a multilayer reflection film, a first thin film and a second thin film in this order on a main surface of a substrate. When the relative reflectance R2 of the second thin film with respect to the reflectance of the multilayer reflection film in light having the wavelength 13.5 nm is 3% or more, the extinction coefficient of the first thin film is k1 in light having the wavelength 13.5 nm, and the thickness of the first thin film is d1 [nm], the mask blank fulfills the relationship of (Expression 1). (Expression 1) 21.5×k12×d12-52.5×k1×d1+32.1>R2SELECTED DRAWING: Figure 3
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Inventors:
IKEBE YOHEI
Application Number:
JP2020212297A
Publication Date:
July 04, 2022
Filing Date:
December 22, 2020
Export Citation:
Assignee:
HOYA CORP
International Classes:
G03F1/24; C23C14/06; G03F1/74; G03F1/84
Attorney, Agent or Firm:
Yutaka Nagata
Takafumi Oshima
Tsukasa Ota
Takafumi Oshima
Tsukasa Ota