Title:
REPRODUCTIVE COMPARATOR AND DIFFERENTIAL AMPLIFIER
Document Type and Number:
Japanese Patent JPH04129320
Kind Code:
A
Abstract:
PURPOSE: To improve the resolution and operating speeds of a comparator and an amplifier by reducing the hysteresis of a transistor by reducing the accumulated charge quantity of the transistor. CONSTITUTION: In a method for selecting the gate width of a QD and a QE, a voltage gain AV is obtained in a stationary state by selecting the bias point of the QE. At the bias point, the QE operates at the knee or higher in drain current source characteristics. It is preferable to maintain the drain-source bias of the QE at a charge accumulation reinforcing value, namely, at less than about 1.5V. The gate width of the QD is selected so that the VDS of the QE becomes a desired value. Since the gate-source voltage VGS for the QD is selected at <0V, the source voltage becomes higher than the gate voltage. Since the QD reduces the variation of VOUT and NVOUT by selecting the width of the QD and QE, the VDS of the QE is separated from the variation of the VOUT. The accumulated charge quantity and hysteresis of the QE are reduced by minimizing the variation of the QE at the operating point.
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Inventors:
FUREDERITSUKU JII UIZU
Application Number:
JP41380990A
Publication Date:
April 30, 1992
Filing Date:
December 25, 1990
Export Citation:
Assignee:
TRIQUINT SEMICONDUCTOR INC
International Classes:
H03K3/0233; H03K3/356; H03K5/08; H03K3/353; (IPC1-7): H03K3/023; H03K3/353; H03K5/08
Attorney, Agent or Firm:
Hidemori Matsukuma