Title:
RESIST MATERIAL AND PATTERN FORMING METHOD
Document Type and Number:
Japanese Patent JP3734012
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To obtain a resist material sensitive to high energy beams, excellent in sensitivity, resolution and etching resistance, useful in micro-fabrication with electron beams or far UV and capable of easily forming a minute pattern perpendicular to a substrate because of slight absorption particularly at the exposure wavelength of ArF excimer laser light or KrF excimer laser light.
SOLUTION: The resist material contains a high molecular compound having repeating units of formulae 1-1 and 1-2 and a weight average molecular weight of 1,000-500,000 as a base resin. In the formulae, R1 is H, methyl or CO2R2; R2 is alkyl; R3 is H, methyl or CH2CO2R2; R4 is an acid labile group; (i) is an integer of 1-4; and (k) is 0 or 1.
Inventors:
Tsuyoshi Kanao
Tsunehiro Nishi
Koji Hasegawa
Takeshi Watanabe
Jun Hatakeyama
Tsunehiro Nishi
Koji Hasegawa
Takeshi Watanabe
Jun Hatakeyama
Application Number:
JP30294899A
Publication Date:
January 11, 2006
Filing Date:
October 25, 1999
Export Citation:
Assignee:
Shin-Etsu Chemical Co., Ltd.
International Classes:
G03F7/039; H01L21/027; C08F32/08; G03F7/004; (IPC1-7): G03F7/039; G03F7/004; H01L21/027; //C08F32/08
Domestic Patent References:
| JP10254140A | ||||
| JP11130844A | ||||
| JP2001188346A |
Foreign References:
| WO1999042510A1 |
Attorney, Agent or Firm:
Takashi Kojima
Yuko Nishikawa
Yuko Nishikawa