RESIST MATERIAL AND PATTERN FORMING METHOD

Japanese Patent JP3900276

B2

PROBLEM TO BE SOLVED: To provide a resist material having excellent transmittance for vacuum UV rays, in particular, to provide a chemically amplifying positive resist material and a method for forming a pattern by using this resist material.
SOLUTION: The resist material contains, as a base resin, a polymer compound having repeating units expressed by general formulae (1a) and (1b) and a polymer compound having a repeating unit containing a sulfonic acid ester. In the general formulae (1a) and (1b), each of R1 and R2 represents a hydrogen atom or an acid unstable group and a and b satisfy 0<a<1, 0<b<1 and 0<a+b≤1. The resist material contains, as a base resin, a blend of a polymer (1) having sensitivity to high energy rays and excellent transparency at ≤200 nm wavelengths and a polymer containing a sulfonic acid ester and having excellent contrast in alkali solubility, in particular, a polymer (2) or a polymer (3). Thus, the resist is improved in the transparency and the contrast in alkali solubility and has excellent durability against plasma etching.

Yuji Harada
Jun Hatakeyama
Yoshio Kawai
Masako Sasako
Masataka Endo
Kishimura Shinji
Kazuhiko Maeda
Haruhiko Komoriya
Satoru Miyazawa

JP2002310572A

April 04, 2007

October 25, 2002

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Shin-Etsu Chemical Co., Ltd.
Matsushita Electric Industrial Co., Ltd
Central Glass Co., Ltd.

G03F7/039; C08F220/26; C08F228/02; C08F232/04; C08F236/20; G03F7/004; H01L21/027; (IPC1-7): G03F7/039; C08F220/26; C08F228/02; C08F232/04; C08F236/20; H01L21/027

JP1163736A
JP2000330289A
JP2002012623A
JP2002155117A
JP2002293840A
JP2004075536A
JP2003292547A

WO2002065212A1

Takashi Kojima
Saori Shigematsu
Katsunari Kobayashi

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