Title:
RESIST PATTERN FORMATION AND ITS DEVICE
Document Type and Number:
Japanese Patent JPH07283112
Kind Code:
A
Abstract:
PURPOSE: To prevent oxidation of silicon atom in resist and to carry out highly accurate patterning at high throughput by carrying out all the operations including carrying of a substrate from an exposure process to a development process in non-oxidizing atmosphere wherein oxidizing gas such as oxygen does not exist.
CONSTITUTION: A development chamber 16 provided with a vacuum evacuation system is installed besides an exposure chamber 15. Both chambers are connected by gate valves 11, 12, 13, 14 or by the gate valves 11, 12, 13, 14 and a sub-chamber. A substrate after exposure is carried into the development chamber 16 without being brought into contact with air. Thereby, generation of silicon oxide is prevented.
Inventors:
YAMAGUCHI ATSUKO
OGAWA TARO
SOGA TAKASHI
UCHIDA FUMIHIKO
ITO MASAAKI
MATSUZAKA TAKASHI
TAKEDA EIJI
OIIZUMI HIROAKI
OGAWA TARO
SOGA TAKASHI
UCHIDA FUMIHIKO
ITO MASAAKI
MATSUZAKA TAKASHI
TAKEDA EIJI
OIIZUMI HIROAKI
Application Number:
JP7038694A
Publication Date:
October 27, 1995
Filing Date:
April 08, 1994
Export Citation:
Assignee:
HITACHI LTD
SOLTEC KK
SOLTEC KK
International Classes:
G03F7/075; C23F1/00; G03F7/36; H01L21/027; (IPC1-7): H01L21/027; C23F1/00; G03F7/075; G03F7/36
Attorney, Agent or Firm:
Junnosuke Nakamura