Title:
RESISTANCE CHANGE ELEMENT, NONVOLATILE MEMORY USING IT, AND MANUFACTURING METHOD THEREOF
Document Type and Number:
Japanese Patent JP2006080259
Kind Code:
A
Abstract:
To provide a resistance change element which is realized by changing electric resistance, and to provide a nonvolatile memory using the same.
The resistance change element comprises a lower part electrode 11, an upper part electrode 13, and a material layer 12 of spinel structure which is arranged between the upper part electrode 13 and the lower part electrode 11. A current or voltage is applied between the lower part electrode 11 and the upper part electrode 13 to change resistance. The material of lower part electrode 11 is metal nitride (titanium nitride is preferred). The resistance change element like this is typically applied to a nonvolatile memory.
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Inventors:
ODAKAWA AKIHIRO
SUGITA YASUNARI
SUGANO TSUTOMU
SAKAI AKIHIRO
ADACHI HIDEAKI
SUGITA YASUNARI
SUGANO TSUTOMU
SAKAI AKIHIRO
ADACHI HIDEAKI
Application Number:
JP2004261921A
Publication Date:
March 23, 2006
Filing Date:
September 09, 2004
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01L27/10
Attorney, Agent or Firm:
Fumio Iwahashi
Tomoyasu Sakaguchi
Hiroki Naito
Tomoyasu Sakaguchi
Hiroki Naito