オペランド測定用二次電池電極

Japanese Patent JP7264342

B2

To provide an oxygen-free current collector thin film which is not deteriorated due to high temperature treatment in forming a film of an electrode active material, and also to provide an electrode structure which is formed by laminating an oxygen-free current collector thin film and an electrode active material thin film on a base material that can transmit soft X-rays and vacuum ultraviolet rays, the electrode structure being capable of allowing an operand measurement of the electron state of oxygen in an electrode active material, in addition to that of the electron state of transition metal, to be performed.SOLUTION: A thin film current collector has a thin film of Si3 N4 or SiC on a Si substrate, and has, on the thin film, a thin film of a two-layer structure comprising a TiN or ZrN thin film and an Au thin film on the TiN or ZrN thin film. In the thin film current collector, even if an electrode active material is further deposited at high temperatures, the components thereof are not oxidized, and low resistance required for operand measurement is maintained. Thus, by a working electrode using the thin film current collector, operand measurement of the electron state of transition metal in an electrode active material can be performed in addition to that of the electron state of oxygen.SELECTED DRAWING: Figure 4

Hosono Eiji
Hirofumi Matsuda
Daisuke Asakura
Yugo Mitsuishi
Yoshihisa Harada

JP2018243111A

April 25, 2023

December 26, 2018

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National Institute of Advanced Industrial Science and Technology

H01M4/66; G01N23/083; G01N23/223; H01M4/02; H01M4/04; H01M4/13; H01M4/139; H01M10/0568; H01M10/058

JP2016040763A
JP2012524385A
JP2015500560A
JP2009088323A
JP2013164971A

Tetsuo Shiba
Mitsuru Iwaike

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