Title:
ＩＩＩ族窒化物結晶の製造方法および種基板
Document Type and Number:
Japanese Patent JP7264343
Kind Code:
B2
Abstract:
An object of the present invention is to provide a method for producing a group III nitride crystal in which generation of breaking or cracks is less likely to occur. To achieve the object, the method for producing a group III nitride crystal includes: seed crystal preparation including disposing a plurality of crystals of a group III nitride as a plurality of seed crystals on a substrate; and crystal growth including growing group III nitride crystals by contacting a surface of each of the seed crystals with a melt containing at least one group III element selected from gallium, aluminum, and indium and an alkali metal in an atmosphere containing nitrogen. In the seed crystal preparation, the plurality of seed crystals are disposed within a hexagonal region provided on the substrate.
Inventors:
Okayama Yoshio
Shinsuke Komatsu
Masahiro Tada
Mori Yusuke
Masayuki Imanishi
Yoshimura Masashi
Shinsuke Komatsu
Masahiro Tada
Mori Yusuke
Masayuki Imanishi
Yoshimura Masashi
Application Number:
JP2019028247A
Publication Date:
April 25, 2023
Filing Date:
February 20, 2019
Export Citation:
Assignee:
Panasonic Holdings Co., Ltd.
National University Corporation Osaka University
National University Corporation Osaka University
International Classes:
C30B29/38; C30B9/06
Domestic Patent References:
| JP2002353152A | ||||
| JP2015166293A | ||||
| JP2018016499A |
Attorney, Agent or Firm:
Patent Attorney Corporation Washida International Patent Office
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