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Title:
SELF-SUPPORTED GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND ITS MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP2006173148
Kind Code:
A
Abstract:

To stably peel a high-quality GaN layer from a sapphire substrate after the GaN layer is formed on the substrate.

A method of manufacturing a self-supported group GaN semiconductor substrate is provided including a step of forming a thick GaN film composed of an Si-doped GaN layer 714 and undoped GaN layer 715 on a sapphire substrate 711, and a step of separating and removing the sapphire substrate 711 without applying any external force by generating cracks in the thick GaN film by cooling the substrate 711 and thick GaN film.


Inventors:
SUNAKAWA HARUO
ISHIHARA YUJIRO
TSUKAMOTO YOSHIAKI
USUI AKIRA
Application Number:
JP2004359211A
Publication Date:
June 29, 2006
Filing Date:
December 10, 2004
Export Citation:
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Assignee:
FURUKAWA CO LTD
International Classes:
H01L21/205
Domestic Patent References:
JP2003069156A2003-03-07
JPH111399A1999-01-06
JP2004115371A2004-04-15
JP2003055097A2003-02-26
JP2006143581A2006-06-08
Attorney, Agent or Firm:
Shinji Hayami



 
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