Title:
SEMICONDUCTOR DEVICE AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JP3528356
Kind Code:
B2
Abstract:
PURPOSE: To manufacture a high-peformance complementary bipolar transistor (BipTr) by adding the minimum process as compared with the conventional manufacturing process of BipTr.
CONSTITUTION: When using a p-type semiconductor substrate, processes are in the order of (1) Formation of n+-type buried collector region 2 of V-NPNTr, (2) Formation of n-type buried separation region 6 of V-PNPTr, (3) Formation of an element isolation region 9 (LOCOS oxidation), and (4) Formation of p+-type buried collector region 13C of V-PNPTr. The processes (1) and (3) are performed under the most severe high-temperature heat treatment conditions for a long time in bipolar process. By placing the processes (2) and (4) at the later stages, the upper diffusion of the buried separation region 6 and the buried collection region 13C into an n-type epitaxial layer (n-Epi) 7 can be suppressed to certain extent, thus enabling n-Epi 7 to be thin and suppressing the Kirk effect of V-NPNTr for speeding up operation.
Inventors:
Gomi, Takayuki
Application Number:
JP23883195A
Publication Date:
May 17, 2004
Filing Date:
September 18, 1995
Export Citation:
Assignee:
SONY CORP
International Classes:
H01L29/73; H01L21/331; H01L21/8228; H01L27/082; H01L29/732; (IPC1-7): H01L21/8228; H01L21/331; H01L27/082; H01L29/732
Attorney, Agent or Firm:
小池 晃 （外２名）