Title:
SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JP2000049159
Kind Code:
A
Abstract:
To form a thin gate insulating film without causing increase of a fixed charge density.
A thin SiO2 film 2 and an amorphous silicon thin film 3 are sequentially formed on a silicon substrate 1, and then subjected to heat treatment in an atmosphere containing NO as a nitriding species to form an oxy nitride film 4A containing nitrogen at an interface between the films 2 and 3 with use of the film 3 forming an interface with the film 2 as a silicon supply source. Thereafter, unwanted SiON film 4' formed on the film 3 during the heat treatment is removed.
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Inventors:
MINAZU YASUMASA
Application Number:
JP15092999A
Publication Date:
February 18, 2000
Filing Date:
May 31, 1999
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
H01L21/8247; H01L21/283; H01L21/318; H01L21/8234; H01L27/088; H01L27/115; H01L29/78; H01L29/788; H01L29/792; (IPC1-7): H01L21/318; H01L21/283; H01L21/8234; H01L27/088; H01L27/115; H01L29/78; H01L21/8247; H01L29/788; H01L29/792
Attorney, Agent or Firm:
Togawa Hideaki
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