Title:
SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JP3679527
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor device in which a silicon film and a titanium silicide film are connected through a titanium silicide film within a contact hole made in an insulating film, and also to provide a method for fabricating the semiconductor device which can prevent peel-off of the titanium silicide film.
SOLUTION: Within a contact hole 5 made in an insulating film 4; a diffusion layer 3a of a silicon substrate 1 and a conductive film 8, a polycrystalline silicon layer 10 and conductive film 8, or a gate electrode 12 and conductive film 8 are connected through a titanium silicide film 6. The film 6 is formed by utilizing a silicide reaction between a titanium film 7 and silicon. And upper and lower thicknesses of the titanium silicide film 6 are set at values prescribed by an internal stress of the conductive film 8 respectively.
Inventors:
Hiromi Todohara
Takeshi Baba
SUZUKI Masayasu
Hideo Miura
Takeshi Baba
SUZUKI Masayasu
Hideo Miura
Application Number:
JP29652096A
Publication Date:
August 03, 2005
Filing Date:
November 08, 1996
Export Citation:
Assignee:
Renesas Technology Corp.
International Classes:
H01L21/28; H01L21/3205; H01L23/52; (IPC1-7): H01L21/28; H01L21/3205
Attorney, Agent or Firm:
Kasuga Toshiaki