Title:
SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JPS60161632
Kind Code:
A
Abstract:
PURPOSE:To prevent the generation of a recessed section in an isolation section caused by a silicon nitride film, and to flatten a semiconductor device by burying a silicon oxide film and polysilicon into a groove without forming the silicon nitride film in the groove. CONSTITUTION:A silicon semiconductor layer 22 is grown on an silicon substrate 21, and a silicon oxide film 25, a silicon nitride film 26 and a silicon oxide film 27 are formed. Grooves 30 are shaped through etching. Silicon oxide films 31 are formed, and channel stoppers 24 are shaped. The silicon oxide films 27, 31 are removed, and silicon oxide films 32 are formed newly through thermal oxidation. A polysilicon film is formed on the whole surface, and polysilicon 34 is left only in the grooves 30 through an etching-back. Silicon oxide films 35 are shaped through thermal oxidation. The silicon nitride film 26 is removed through etching, thus completing groove-shaped isolations. The silicon oxide films 35 coalesce into the silicon oxide films 32 on groove walls, and recessed sections are not generated ground the grooves.
Inventors:
KAWAJI MOTONORI
UCHIDA AKIHISA
TAKAKURA TOSHIHIKO
UCHIDA AKIHISA
TAKAKURA TOSHIHIKO
Application Number:
JP1521184A
Publication Date:
August 23, 1985
Filing Date:
February 01, 1984
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L21/76; (IPC1-7): H01L21/302
Attorney, Agent or Firm:
Katsuo Ogawa (1 person outside)