SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

Japanese Patent JP2015056486

A

PROBLEM TO BE SOLVED: To provide a semiconductor device which can reduce contact resistance on a p-type GaN-based semiconductor.SOLUTION: A semiconductor device of an embodiment comprises: an n-type first GaN-based semiconductor layer; a p-type second GaN-based semiconductor layer having a low-impurity concentration region on the first GaN-based semiconductor layer on the first GaN-based semiconductor layer side and a high-impurity concentration region on the first GaN-based semiconductor layer on the side opposite to the first GaN-based semiconductor; an n-type third GaN-based semiconductor layer on the second GaN-based semiconductor layer on the side opposite to the first GaN-based semiconductor layer; a gate electrode which has one end located in the third GaN-based semiconductor layer or above the third GaN-based semiconductor layer and the other end located in the first GaN-based semiconductor layer, and which is adjacent to the third GaN-based semiconductor layer, the low-impurity concentration region and the first GaN-based semiconductor layer via a gate insulation film; a first electrode on the third GaN-based semiconductor layer: a second electrode on the high-impurity concentration region; and a third electrode on the first GaN-based semiconductor layer on the side opposite to the second GaN-based semiconductor layer.

YOSHIOKA AKIRA
SUGIYAMA TORU
SAITO YASUNOBU
TSUDA KUNIO

JP2013188369A

March 23, 2015

September 11, 2013

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TOSHIBA CORP

H01L21/337; H01L21/28; H01L21/336; H01L21/338; H01L29/12; H01L29/417; H01L29/778; H01L29/78; H01L29/808; H01L29/812

JP2012084739A	2012-04-26
JP2011165777A	2011-08-25
JP2012084562A	2012-04-26
JP2009177110A	2009-08-06
JP2008053450A	2008-03-06

Tetsuma Ikegami
Akira Sudo
Mitsuyuki Matsuyama

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