To provide a semiconductor device such that an upper-layer wire formed in the same layer with a bonding pad is made fine, by preventing an inter-layer insulating film formed below the bonding pad from cracking, and a manufacturing method thereof.
A first metal film 20 is formed on the inter-layer insulating film 17. The first metal film 20 is anisotropically etched using first resist as a mask. On the inter-layer insulating film 17, a second metal film 24 having a lower Young's modulus than that of the first metal layer 20 is formed covering the remaining first metal film 20. A second resist is formed on the second metal film 24, in a region where the first metal film 20 is present on the inter-layer insulating film 17 and in a portion of a region where the first metal film 20 does not exist. The second metal film 24 is etched anisotropically, by using the second resist 33 as a mask to form the bonding pad having the first metal film 20 and second metal film 24, and the upper-layer wire 22 which has the second metal film 24 but does not have the first metal film 20.
MITSUYAMA HIROSHI
HASEGAWA KATSUYOSHI
NISHITSUJI KEIKO
MIKI KAZUNOBU
| JP2007049097A | 2007-02-22 | |||
| JPH113984A | 1999-01-06 | |||
| JP2001326242A | 2001-11-22 | |||
| JP2008112825A | 2008-05-15 |
| WO2005083767A1 | 2005-09-09 |
Hideki Takahashi
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