Title:
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Document Type and Number:
Japanese Patent JP3383329
Kind Code:
B2
Abstract:
PURPOSE: To increase the thermal resistance cycle efficiency by a method wherein the positions of the crest parts of bump electrodes for signal input and output and those of the upper end parts of resin films are shifted from one another so as to make said crest parts protrude from said upper end parts.
CONSTITUTION: Polyimide resin films 6 can prevent themselves from cracking since the crest parts 7 of bump electrodes 5a-5c are protruded the upper end parts 8 of the polyimide resin films 6 even if leads 10a-10c are pushed into the bump electrodes 5a-5c by the pressure P of a bonding tool 9 for deforming the bump electrodes 5a-5c. Furthermore, the leads 10a-10c are not to be brought into contact with the polyimide resin films 6 due to the crest parts 7 of the bump electrodes 5a-5c protruded from the upper end parts 8 of the polyimide resin films 6 so that the decomposition of the polyimide resin films 6 may be avoided even if the leads 10a-10c are bonded onto the bump electrodes 5a-5c using the thermal pressure fixing step. Through these procedures, this semiconductor device having the humidity resistance and reliability thereupon not to be deteriorated and the manufacturing method thereof can be provided.
More Like This:
Inventors:
Hirokazu Ezawa
Masahiro Miyata
Masahiro Miyata
Application Number:
JP22834392A
Publication Date:
March 04, 2003
Filing Date:
August 27, 1992
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L21/56; H01L21/321; H01L21/60; H01L23/31; H01L23/485; (IPC1-7): H01L21/60
Domestic Patent References:
| JP6336548A | ||||
| JP62136049A | ||||
| JP453138A | ||||
| JP2159034A | ||||
| JP4186834A |
Attorney, Agent or Firm:
Takehiko Suzue (6 outside)
Previous Patent: INHIBITOR OF HIV AND RELATED VIRUS AND INHIBITING METHOD
Next Patent: PRODUCTION OF METALLIC MULTIPLE OXIDE FILM
Next Patent: PRODUCTION OF METALLIC MULTIPLE OXIDE FILM