Title:
SEMICONDUCTOR DEVICE AND METHDO OF MANUACTURING THE SAME
Document Type and Number:
Japanese Patent JP2001196325
Kind Code:
A
Abstract:
To provide a semiconductor device which is restrained from malfunctioning or increasing in a leakage current and a manufacturing method therefor.
A semiconductor device is equipped with a semiconductor substrate 1 provided with a primary surface, an element isolating region 10 provided on the primary surface of the substrate 1, an insulating layer 6 provided on the primary surface of the substrate 1, and a first semiconductor layer 11 provided in a prescribed region of the element isolating region 10 which is cut when a contact hole 13 is formed.
Inventors:
NAKAHATA TAKUMI
MARUNO SHIGEMITSU
FURUKAWA TAISUKE
TOKUDA YASUKI
MARUNO SHIGEMITSU
FURUKAWA TAISUKE
TOKUDA YASUKI
Application Number:
JP2000002357A
Publication Date:
July 19, 2001
Filing Date:
January 11, 2000
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L21/76; H01L21/28; H01L21/336; H01L21/768; H01L21/8234; H01L23/522; H01L27/08; H01L27/088; H01L29/78; (IPC1-7): H01L21/28; H01L21/336; H01L21/76; H01L21/768; H01L21/8234; H01L27/08; H01L27/088; H01L29/78
Attorney, Agent or Firm:
Kaneo Miyata (1 person outside)
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