SUBSTRATE THERMAL TREATMENT - APPLIED MATERIALS INC

Title:

SUBSTRATE THERMAL TREATMENT

Document Type and Number:

Japanese Patent JP2001196324

Kind Code:

A

Abstract:

To provide a method of optimally treating a semiconductor substrate.

A temperature response of a substrate is controlled during a heat-up phase or a cool-down phase, or during both the phases. This reduces the thermal budget of the substrate and improves the quality and performance of the devices formed on the substrate. Particularly, by controlling the rate of heat transfer between the substrate and a thermal reservoir (e.g. water-cooled reflector plate assembly), the temperature response of the substrate can be controlled during the thermal process. The rate of heat transfer can be changed by changing the thermal conductivity between the substrate and the thermal reservoir, by changing the emissivity of a surface of the thermal reservoir, or by changing a distance between the substrate and the thermal reservoir. The thermal conductivity can be changed by changing the characteristics of a thermal transport medium (e.g. purge gas) located between the substrate and the thermal reservoir. Far example, the thermal conductivity may be changed by changing the composition of the purge gas or the pressure of the purge gas between the substrate and the thermal reservoir.

More Like This:

JP2006013269	DEVICE AND METHOD FOR VAPOR PHASE EPITAXY
WO/2013/009433	METHOD OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS ON GLASS SUBSTRATES AND DEVICES THEREON
JP3102832	Invention: Substrate heat treatment method and heat treatment apparatus

Inventors:

BOAS RYAN C
BALAKRISHNA AJIT
BIERMAN BENJAMIN B
HAAS BRIAN L
JENNINGS DEAN
ADERHOLD WOLFGANG R
RAMAMURTHY SUNDAR
MAYAR ABHILASH

Application Number:

JP2000208418A

Publication Date:

July 19, 2001

Filing Date:

July 10, 2000

Export Citation:

Click for automatic bibliography generation Help

Assignee:

APPLIED MATERIALS INC

International Classes:

H01L21/26; C30B25/10; C30B31/12; H01L21/00; H01L21/31; H01L21/324; (IPC1-7): H01L21/26; H01L21/31

Domestic Patent References:

JPH0869977A	1996-03-12
JPH0997830A	1997-04-08
JPH02240923A	1990-09-25
JPH10144628A	1998-05-29
JPH07307258A	1995-11-21

Foreign References:

WO2000016380A1

2000-03-23

Attorney, Agent or Firm:

Yoshiki Hasegawa (1 person outside)

Previous Patent: AUXILIARY HEATING PLATE

Next Patent: SEMICONDUCTOR DEVICE AND METHDO OF MANUACTURING THE SAME