Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING IT
Document Type and Number:
Japanese Patent JPH1140501
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To form a polycrystalline semiconductor layer of good crystallinity by irradiating an amorphous semiconductor layer deposited on a substrate with energy beam, depositing an amorphous semiconductor layer of the same composition on the poly-crystallized layer surface, and irradiating it with energy beam. SOLUTION: An SiO2 film 2 is deposited on the surface of a glass substrate 1, and on the surface of the SiO2 film 2, a silicon layer 3 of first layer comprising amorphous silicon is deposited. After that, beat treatment is performed in a nitrogen atmosphere, and the silicon layer 3 is irradiated with laser beam 4, for poly-crystallization of the silicon layer 3. On the surface of the silicon layer 3, a silicon layer 5 of second layer comprising amorphous silicon is deposited under the same condition as for the first layer. After the silicon layer 5 (second layer) is deposited, heat treatment is performed in nitrogen atmosphere, and the silicon layer 5 (second layer) is irradiated with laser beam 6. Thus, the silicon layer 5 is poly-crystallized. In this way, process for poly- crystallization is repeated.
Inventors:
HARA AKITO
KITAHARA KUNINORI
MURAKAMI SATOSHI
KITAHARA KUNINORI
MURAKAMI SATOSHI
Application Number:
JP23975397A
Publication Date:
February 12, 1999
Filing Date:
September 04, 1997
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L21/20; H01L21/336; H01L29/786; (IPC1-7): H01L21/20; H01L29/786; H01L21/336
Attorney, Agent or Firm:
Keishiro Takahashi