Title:
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP2007013154
Kind Code:
A
Abstract:
To provide a silicon carbide substrate which can be worked at low cost, used for a semiconductor device, and has a relatively low defect density.
A composite structure (16) is provided including a silicon carbide epitaxial layer. The epitaxial layer is vertically disposed and includes at least four regions for demarcating the respective interface surfaces. The regions are characterized by the respective impurity concentrations. The impurity concentrations change beyond the interface surfaces, and at least one impurity exceeds a concentration of 1×1017 cm-3 in each of the regions.
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Inventors:
ROWLAND LARRY B
ELASSER AHMED
ELASSER AHMED
Application Number:
JP2006176143A
Publication Date:
January 18, 2007
Filing Date:
June 27, 2006
Export Citation:
Assignee:
GEN ELECTRIC
International Classes:
H01L29/167
Domestic Patent References:
| JP2002329670A | 2002-11-15 |
Attorney, Agent or Firm:
Kenichi Matsumoto
Hirokazu Ogura
Toshihisa Kurokawa
Arakawa Satoshi
Hirokazu Ogura
Toshihisa Kurokawa
Arakawa Satoshi
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