Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2015130538
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor device which inhibits fluctuation in electric characteristics due to a short-channel effect in a transistor using an oxide semiconductor film for a channel formation region and achieves microfabrication; and provide a semiconductor device which improves an on-state current.SOLUTION: The semiconductor device comprises: an oxide semiconductor film including a pair of second oxide semiconductor regions which are amorphous regions and a first oxide semiconductor region sandwiched by the pair of second oxide semiconductor regions; a gate insulation film; and a gate electrode provided on the first oxide semiconductor region via the gate insulation film. The second oxide semiconductor regions are added with any one or more elements of group 15 elements such as nitrogen, phosphorus and arsenic.
Inventors:
YAMAZAKI SHUNPEI
Application Number:
JP2015080230A
Publication Date:
July 16, 2015
Filing Date:
April 09, 2015
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB
International Classes:
H01L29/786; H01L21/336; H01L21/8242; H01L21/8244; H01L21/8247; H01L27/108; H01L27/11; H01L27/115; H01L29/788; H01L29/792
Domestic Patent References:
| JP2010093070A | 2010-04-22 | |||
| JP2003050405A | 2003-02-21 | |||
| JP2010004000A | 2010-01-07 | |||
| JP4415062B1 | 2010-02-17 | |||
| JP2008277665A | 2008-11-13 |
Foreign References:
| US20100084655A1 | 2010-04-08 | |||
| US20020056838A1 | 2002-05-16 |