Semiconductor device - Semiconductor Energy Laboratory Co., Ltd.

Title:

Semiconductor device

Document Type and Number:

Japanese Patent JP5912709

Kind Code:

B2

Abstract:

In the transistor including an oxide semiconductor film, a gate insulating film of the transistor including an oxide semiconductor film has a stacked-layer structure of the hydrogen capture film and the hydrogen permeable film. At this time, the hydrogen permeable film is formed on a side which is in contact with the oxide semiconductor film, and the hydrogen capture film is formed on a side which is in contact with a gate electrode. After that, hydrogen released from the oxide semiconductor film is transferred to the hydrogen capture film through the hydrogen permeable film by the heat treatment.

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Inventors:

Yuuki Imoto
Tetsuki Maruyama
Yuta Endo

Application Number:

JP2012062923A

Publication Date:

April 27, 2016

Filing Date:

March 20, 2012

Export Citation:

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Assignee:

Semiconductor Energy Laboratory Co., Ltd.

International Classes:

H01L29/786; G09F9/00; G09F9/30; H01L21/283; H01L21/336; H01L21/8242; H01L21/8247; H01L27/10; H01L27/105; H01L27/108; H01L27/115; H01L29/417; H01L29/788; H01L29/792

Domestic Patent References:

JP2008270723A
JP2003086808A

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