Title:
Semiconductor device
Document Type and Number:
Japanese Patent JP6034980
Kind Code:
B2
Abstract:
A semiconductor device includes a memory transistor (10A) which is capable of being irreversibly changed from a semiconductor state where drain current Ids depends on gate voltage Vg to a resistor state where drain current Ids does not depend on gate voltage Vg. The memory transistor (10A) includes a gate electrode (3), a metal oxide layer (7), a gate insulating film (5), and source and drain electrodes. The drain electrode (9d) has a multilayer structure which includes a first drain metal layer (9d1) and a second drain metal layer (9d2), the first drain metal layer (9d1) being made of a first metal whose melting point is not less than 1200° C., the second drain metal layer (9d2) being made of a second metal whose melting point is lower than that of the first metal. Part P of the drain electrode 9d extends over both the metal oxide layer (7) and the gate electrode (3) when viewed in a direction normal to a surface of the substrate. The part (P) of the drain electrode (9d) includes the first drain metal layer (9d1) and does not include the second drain metal layer (9d2).
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Inventors:
Juno Kato
Naoki Ueda
Naoki Ueda
Application Number:
JP2015547665A
Publication Date:
November 30, 2016
Filing Date:
August 15, 2014
Export Citation:
Assignee:
Sharp Corporation
International Classes:
H01L27/105; G02F1/1368; H01L29/786; H01L45/00; H01L49/00
Domestic Patent References:
| JP2010123748A | 2010-06-03 |
Foreign References:
| WO2013065600A1 | 2013-05-10 | |||
| WO2013080784A1 | 2013-06-06 |
Attorney, Agent or Firm:
Seiji Okuda
Osamu Kita
Ryoji Yamashita
Akiko Miyake
Hidetaka Okabe
Yu Tanaka
Murase Nariyasu
Rinko Kita
Osamu Kita
Ryoji Yamashita
Akiko Miyake
Hidetaka Okabe
Yu Tanaka
Murase Nariyasu
Rinko Kita
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